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HSU119
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-444(Z) Rev 0 Feb. 1997 Features
* Low capacitance. (C = 2.0pF max) * Short reverse recovery time. (trr = 3.0ns max) * Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. HSU119 Laser Mark H1 Package Code URP
Outline
Cathode mark Mark 1
H1
2 1. Cathode 2. Anode
HSU119
Absolute Maximum Ratings (Ta = 25C)
Item Peak reverse voltage Reverse voltage Average forward current Peak rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRM VR IO I FM I FSM Tj Tstg
*1
Value 85 80 100 300 4 125 -55 to +125
Unit V V mA mA A C C
1. Within 1 s forward surge current.
Electrical Characteristics (Ta = 25C)
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Reverse recovery time*1 Note: IR C t rr Min -- -- -- -- -- Typ -- -- -- -- -- Max 0.8 1.2 0.1 2.0 3.0 A pF ns Unit V Test Condition I F = 10 mA I F = 100 mA VR = 80V VR = 0V, f = 1 MHz I F = 10 mA, VR = 6V RL= 50
1. Reverse recovery time test circuit
DC Supply
0.1F
3k Sampling Rin =50 Oscilloscope
Ro =50 Pulse Generator
Trigger
2
HSU119
Main Characteristic
-4
1.0
10 10
Reverse current I R (A)
-5
(A)
Forward current IF
10
-1
10 10 10 10 10
-6
Ta=75C Ta=50C
-7
Ta=25C
-8
10
-2
Ta= 75 C Ta= 25C Ta=25C
-9
-10
10
-3
10 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage V F (V)
-11
0
20
40
60
80
100
Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
f=1MHz
10
(pF) Capacitance C
1.0
10 -1 10
-1
1.0 Reverse voltage V R (V)
10
Fig.3 Capacitance Vs. Reverse voltage
3
HSU119
Package Dimensions
Unit : mm
Cathode Mark
1
H1
1.70.15 2.50.15
2 0.30.15
1.250.15
1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) 0 `0.10
URP
-- -- 0.004
4
0.90.15
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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